Factory Lead Time  

16 Weeks

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

140W Tc

Turn Off Delay Time  

85 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

20A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Series  

MDmesh™ II

Operating Temperature  

150°C TJ

Packaging  

Tube

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

165mOhm

Base Part Number  

STW26N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

140W

Turn On Delay Time  

13 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

165m Ω @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1800pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

60nC @ 10V

Rise Time  

25ns

Vgs (Max)  

±30V

Fall Time (Typ)  

50 ns

Continuous Drain Current (ID)  

20A

Threshold Voltage  

3V

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

80A

Width  

5.15mm

Height  

20.15mm

Length  

15.75mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free