Factory Lead Time  

16 Weeks

Package / Case  

TO-220-3

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

15 ns

Power Dissipation (Max)  

150W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

18A Tc

Series  

MDmesh™ II Plus

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

190MOhm

Base Part Number  

STP24N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

150W

Case Connection  

DRAIN

Turn On Delay Time  

14 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

190m Ω @ 9A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1060pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

29nC @ 10V

Rise Time  

9ns

Vgs (Max)  

±25V

Fall Time (Typ)  

61 ns

Continuous Drain Current (ID)  

18A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

72A

Avalanche Energy Rating (Eas)  

180 mJ

Width  

4.6mm

Length  

10.4mm

Height  

15.75mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

Lead Free  

Lead Free