Factory Lead Time  

26 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Weight  

2.299997g

Transistor Element Material  

SILICON

Collector-Emitter Breakdown Voltage  

600V

Collector-Emitter Saturation Voltage  

2.6V

Number of Elements  

1

Test Conditions  

300V, 20A, 5 Ω, 15V

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

GenX3™

Published  

2011

JESD-609 Code  

e1

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Finish  

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation  

220W

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

IXG*30N60

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Power Dissipation  

220W

Case Connection  

COLLECTOR

Input Type  

Standard

Transistor Application  

POWER CONTROL

Polarity/Channel Type  

N-CHANNEL

Collector Emitter Voltage (VCEO)  

3V

Max Collector Current  

60A

Reverse Recovery Time  

60 ns

JEDEC-95 Code  

TO-220AB

Turn On Time  

45 ns

Vce(on) (Max) @ Vge, Ic  

3V @ 15V, 20A

Turn Off Time-Nom (toff)  

160 ns

IGBT Type  

PT

Gate Charge  

38nC

Current - Collector Pulsed (Icm)  

150A

Td (on/off) @ 25°C  

16ns/42ns

Switching Energy  

270μJ (on), 90μJ (off)

Gate-Emitter Voltage-Max  

20V

Gate-Emitter Thr Voltage-Max  

5.5V

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free