Surface Mount  

YES

Number of Terminals  

2

Transistor Element Material  

SILICON

EU RoHS  

Compliant with Exemption

ECCN (US)  

EAR99

HTS  

8542.31.00.01

SVHC  

Yes

SVHC Exceeds Threshold  

Yes

Automotive  

No

PPAP  

No

Category  

Power MOSFET

Channel Mode  

Enhancement

Number of Elements per Chip  

1

Maximum Drain Source Voltage (V)  

150

Maximum Gate Source Voltage (V)  

±30

Maximum Continuous Drain Current (A)  

66

Maximum Drain Source Resistance (MOhm)  

36@10V

Typical Gate Charge @ Vgs (nC)  

49@10V

Typical Gate Charge @ 10V (nC)  

49

Typical Input Capacitance @ Vds (pF)  

2200@25V

Maximum Power Dissipation (mW)  

357000

Typical Fall Time (ns)  

180

Typical Rise Time (ns)  

480

Typical Turn-Off Delay Time (ns)  

65

Typical Turn-On Delay Time (ns)  

40

Minimum Operating Temperature (°C)  

-55

Maximum Operating Temperature (°C)  

150

Mounting  

Surface Mount

Package Height  

4.83(Max)

Package Width  

9.65(Max)

Package Length  

10.67(Max)

PCB changed  

2

Tab  

Tab

Standard Package Name  

TO-263

Supplier Package  

D2PAK

Lead Shape  

Gull-wing

Package Description  

LEAD FREE, D2PAK-3

Package Style  

SMALL OUTLINE

Moisture Sensitivity Levels  

1

Package Body Material  

PLASTIC/EPOXY

Rohs Code  

Yes

Manufacturer Part Number  

FDB66N15TM

Package Shape  

RECTANGULAR

Manufacturer  

Fairchild Semiconductor Corporation

Number of Elements  

1

Part Life Cycle Code  

Obsolete

Ihs Manufacturer  

FAIRCHILD SEMICONDUCTOR CORP

Risk Rank  

5.39

Part Package Code  

TO-263

Drain Current-Max (ID)  

66 A

Packaging  

Tape and Reel

JESD-609 Code  

e3

Part Status  

Obsolete

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Terminal Position  

SINGLE

Terminal Form  

GULL WING

Reach Compliance Code  

not_compliant

Pin Count  

3

JESD-30 Code  

R-PSSO-G2

Qualification Status  

Not Qualified

Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

Transistor Application  

SWITCHING

Polarity/Channel Type  

N-CHANNEL

JEDEC-95 Code  

TO-263

Drain-source On Resistance-Max  

0.036 Ω

Pulsed Drain Current-Max (IDM)  

264 A

DS Breakdown Voltage-Min  

150 V

Channel Type  

N

Avalanche Energy Rating (Eas)  

1240 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR