Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

4A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

70W Tc

Turn Off Delay Time  

29 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 50μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

SuperMESH™

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - annealed

Base Part Number  

STB4N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

70W

Turn On Delay Time  

12 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2 Ω @ 2A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

510pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

26nC @ 10V

Rise Time  

9.5ns

Vgs (Max)  

±30V

Fall Time (Typ)  

16.5 ns

Continuous Drain Current (ID)  

4A

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

4A

Drain-source On Resistance-Max  

2Ohm

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

16A

Avalanche Energy Rating (Eas)  

120 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant