Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

3A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

25W Tc

Turn Off Delay Time  

35 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 50μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH™

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

3.5Ohm

Terminal Finish  

Matte Tin (Sn) - annealed

Additional Feature  

AVALANCHE RATED

Base Part Number  

STP4N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

25W

Case Connection  

ISOLATED

Turn On Delay Time  

13 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3.5 Ω @ 1.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

575pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

22.5nC @ 10V

Rise Time  

12ns

Vgs (Max)  

±30V

Fall Time (Typ)  

32 ns

Continuous Drain Current (ID)  

3A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

3A

Drain to Source Breakdown Voltage  

800V

Pulsed Drain Current-Max (IDM)  

12A

Avalanche Energy Rating (Eas)  

190 mJ

Height  

9.3mm

Length  

10.4mm

Width  

4.6mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free