Surface Mount  

NO

Package / Case  

TO-220-3

Mounting Type  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

19A Tc

Drive Voltage (Max Rds On, Min Rds On)  

5V 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2V @ 1mA

Power Dissipation (Max)  

56W Tc

Number of Elements  

1

Published  

1999

Series  

TrenchMOS™

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

LOGIC LEVEL COMPATIBLE, FAST SWITCHING

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

70m Ω @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

650pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

9.4nC @ 5V

Drain to Source Voltage (Vdss)  

55V

Vgs (Max)  

±15V

JEDEC-95 Code  

TO-220AB

Drain Current-Max (Abs) (ID)  

19A

Drain-source On Resistance-Max  

0.075Ohm

Pulsed Drain Current-Max (IDM)  

76A

DS Breakdown Voltage-Min  

55V

Avalanche Energy Rating (Eas)  

34 mJ

Source Url Status Check Date  

2013-06-14 00:00:00

RoHS Status  

ROHS3 Compliant