Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-3P-3, SC-65-3

Number of Pins  

3

Weight  

6.401g

Transistor Element Material  

SILICON

Power Dissipation (Max)  

312.5W Tc

Turn Off Delay Time  

105 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

35A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Packaging  

Tube

Series  

SuperFET™

Published  

2013

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

HTS Code  

8541.29.00.95

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

312.5W

Turn On Delay Time  

34 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

98m Ω @ 17.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

6640pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

181nC @ 10V

Rise Time  

120ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±30V

Fall Time (Typ)  

73 ns

Continuous Drain Current (ID)  

35A

Threshold Voltage  

3V

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.098Ohm

Drain to Source Breakdown Voltage  

650V

Pulsed Drain Current-Max (IDM)  

105A

Avalanche Energy Rating (Eas)  

1455 mJ

Width  

5mm

Height  

20.1mm

Length  

15.8mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant