Factory Lead Time  

13 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-236-3, SC-59, SOT-23-3

Transistor Element Material  

SILICON

Collector-Emitter Breakdown Voltage  

50V

Number of Elements  

1

Operating Temperature (Max.)  

150°C

Packaging  

Tape & Reel (TR)

JESD-609 Code  

e1

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Additional Feature  

BUILT-IN BIAS RESISTOR RATIO IS 1

HTS Code  

8541.21.00.75

Max Power Dissipation  

200mW

Terminal Position  

DUAL

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

10

Pin Count  

3

JESD-30 Code  

R-PDSO-G3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN RESISTOR

Power - Max  

200mW

Transistor Application  

SWITCHING

Polarity/Channel Type  

PNP

Transistor Type  

PNP - Pre-Biased

Collector Emitter Voltage (VCEO)  

300mV

Max Collector Current  

500mA

DC Current Gain (hFE) (Min) @ Ic, Vce  

47 @ 50mA 5V

Current - Collector Cutoff (Max)  

500nA

Vce Saturation (Max) @ Ib, Ic  

300mV @ 2.5mA, 50mA

Transition Frequency  

200MHz

Max Breakdown Voltage  

50V

Frequency - Transition  

200MHz

Resistor - Base (R1)  

4.7 k Ω

Resistor - Emitter Base (R2)  

4.7 k Ω

VCEsat-Max  

0.3 V

RoHS Status  

ROHS3 Compliant