Factory Lead Time  

6 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

100A Ta

Drive Voltage (Max Rds On, Min Rds On)  

10V 15V

Number of Elements  

1

Power Dissipation (Max)  

2.1W Ta 110W Tc

Turn Off Delay Time  

68 ns

Operating Temperature  

175°C TJ

Packaging  

Tube

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Finish  

Tin (Sn)

Terminal Position  

SINGLE

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Turn On Delay Time  

40 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

7.2m Ω @ 50A, 15V

Vgs(th) (Max) @ Id  

4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds  

2950pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

35nC @ 10V

Rise Time  

385ns

Drain to Source Voltage (Vdss)  

100V

Vgs (Max)  

±20V

Fall Time (Typ)  

52 ns

Continuous Drain Current (ID)  

100A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.0087Ohm

Pulsed Drain Current-Max (IDM)  

400A

DS Breakdown Voltage-Min  

100V

Avalanche Energy Rating (Eas)  

147 mJ

RoHS Status  

RoHS Compliant

Lead Free  

Lead Free