Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

18A Ta

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

2W Ta 25W Tc

Turn Off Delay Time  

27 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 1mA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Bulk

Published  

2011

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

HTS Code  

8541.29.00.95

Terminal Position  

SINGLE

JESD-30 Code  

R-PSFM-T3

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Turn On Delay Time  

16 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

65m Ω @ 9A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

680pF @ 20V

Gate Charge (Qg) (Max) @ Vgs  

11.4nC @ 10V

Rise Time  

33ns

Drain to Source Voltage (Vdss)  

100V

Vgs (Max)  

±30V

Fall Time (Typ)  

15 ns

Continuous Drain Current (ID)  

18A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.065Ohm

Pulsed Drain Current-Max (IDM)  

72A

DS Breakdown Voltage-Min  

100V

Avalanche Energy Rating (Eas)  

53 mJ

Radiation Hardening  

No

RoHS Status  

RoHS Compliant