Surface Mount  

YES

Number of Terminals  

3

Transistor Element Material  

SILICON

Exterior Housing Material  

1

Type of module  

IGBT

Semiconductor structure  

transistor/transistor

Max. off-state voltage  

1.7kV

Collector current  

150A

Case  

SEMITRANS3

Electrical mounting  

FASTON connectors,

Gate-emitter voltage  

±20V

Pulsed collector current  

450A

Mechanical mounting  

screw

Gross weight  

325 g

Rohs Code  

Yes

Part Life Cycle Code  

Active

Ihs Manufacturer  

ROHM CO LTD

Operating Temperature-Max  

150 °C

Package Body Material  

PLASTIC/EPOXY

Package Shape  

RECTANGULAR

Package Style  

SMALL OUTLINE

Transition Frequency-Nom (fT)  

200 MHz

JESD-609 Code  

e1

Pbfree Code  

Yes

ECCN Code  

EAR99

Terminal Finish  

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Position  

DUAL

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Reach Compliance Code  

compliant

Time@Peak Reflow Temperature-Max (s)  

10

JESD-30 Code  

R-PDSO-G3

Qualification Status  

Not Qualified

Configuration  

SINGLE

Topology  

IGBT half-bridge

Transistor Application  

SWITCHING

Polarity/Channel Type  

PNP

Power Dissipation-Max (Abs)  

0.3 W

Collector Current-Max (IC)  

0.5 A

DC Current Gain-Min (hFE)  

100

Collector-Emitter Voltage-Max  

45 V

VCEsat-Max  

0.6 V

2nd Connector Number of Positions Loaded  

for UPS,

Collector-Base Capacitance-Max  

15 pF