Mounting Type  

Surface Mount

Package / Case  

TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount  

YES

Number of Pins  

4

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

3.5V @ 130μA

Current - Continuous Drain (Id) @ 25℃  

4.4A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

37W Tc

Published  

2008

Operating Temperature  

-55°C~150°C TJ

Packaging  

Cut Tape (CT)

Series  

CoolMOS™

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

Terminal Finish  

Tin (Sn)

Terminal Position  

SINGLE

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSSO-G2

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

950m Ω @ 1.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

280pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

13nC @ 10V

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±20V

Drain Current-Max (Abs) (ID)  

4.4A

Drain-source On Resistance-Max  

0.95Ohm

Pulsed Drain Current-Max (IDM)  

12A

DS Breakdown Voltage-Min  

600V

Avalanche Energy Rating (Eas)  

46 mJ

RoHS Status  

ROHS3 Compliant