Package / Case  

TO-251-3 Short Leads, IPak, TO-251AA

Mount  

Through Hole

Mounting Type  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

1.88W Ta 60W Tj

Turn Off Delay Time  

27.1 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

20A Ta

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Packaging  

Tube

Published  

2007

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Finish  

Tin (Sn)

HTS Code  

8541.29.00.95

Voltage - Rated DC  

60V

Peak Reflow Temperature (Cel)  

260

Current Rating  

20A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSIP-T3

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

60W

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

46m Ω @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1015pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

30nC @ 10V

Rise Time  

60.5ns

Vgs (Max)  

±20V

Fall Time (Typ)  

37.1 ns

Continuous Drain Current (ID)  

20A

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.046Ohm

Drain to Source Breakdown Voltage  

60V

Pulsed Drain Current-Max (IDM)  

60A

Avalanche Energy Rating (Eas)  

170 mJ

RoHS Status  

RoHS Compliant

Lead Free  

Lead Free