Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-251-3 Stub Leads, IPak

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

6.9A Ta 35A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 11.5V

Number of Elements  

1

Power Dissipation (Max)  

1.26W Ta 32.6W Tc

Turn Off Delay Time  

11.4 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.5V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Published  

2008

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

30V

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

35A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

1.92W

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

15m Ω @ 30A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

770pF @ 12V

Gate Charge (Qg) (Max) @ Vgs  

6.6nC @ 4.5V

Rise Time  

21.4ns

Vgs (Max)  

±20V

Fall Time (Typ)  

21.4 ns

Continuous Drain Current (ID)  

35A

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

6.9A

Drain-source On Resistance-Max  

0.025Ohm

Drain to Source Breakdown Voltage  

30V

Pulsed Drain Current-Max (IDM)  

87A

Avalanche Energy Rating (Eas)  

60.5 mJ

RoHS Status  

RoHS Compliant

Lead Free  

Lead Free