Package / Case  

TO-236-3, SC-59, SOT-23-3

Mount  

Surface Mount

Mounting Type  

Surface Mount

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

3V @ 1mA

Power Dissipation (Max)  

225mW Ta

Turn Off Delay Time  

10 ns

Current - Continuous Drain (Id) @ 25℃  

500mA Ta

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Published  

1997

Packaging  

Tape & Reel (TR)

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e0

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin/Lead (Sn/Pb)

Voltage - Rated DC  

60V

Terminal Position  

DUAL

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

240

Current Rating  

500mA

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PDSO-G3

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

225mW

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

5 Ω @ 200mA, 10V

Input Capacitance (Ciss) (Max) @ Vds  

60pF @ 10V

Vgs (Max)  

±20V

Continuous Drain Current (ID)  

500mA

JEDEC-95 Code  

TO-236AB

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

0.5A

Drain-source On Resistance-Max  

5Ohm

Drain to Source Breakdown Voltage  

60V

REACH SVHC  

not_compliant

RoHS Status  

Non-RoHS Compliant

Lead Free  

Contains Lead