Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount  

YES

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

30A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

3W Ta 125W Tc

Turn Off Delay Time  

98 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

Published  

2006

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

LAST SHIPMENTS (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

80MOhm

Terminal Finish  

Tin (Sn)

Additional Feature  

AVALANCHE RATED

Voltage - Rated DC  

-60V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Current Rating  

-30A

Time@Peak Reflow Temperature-Max (s)  

40

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

3W

Case Connection  

DRAIN

Turn On Delay Time  

14.7 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

80m Ω @ 15A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2190pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

80nC @ 10V

Rise Time  

25.9ns

Drain to Source Voltage (Vdss)  

60V

Vgs (Max)  

±15V

Fall Time (Typ)  

52.4 ns

Continuous Drain Current (ID)  

30A

Gate to Source Voltage (Vgs)  

15V

Drain to Source Breakdown Voltage  

-60V

Avalanche Energy Rating (Eas)  

450 mJ

Nominal Vgs  

-2.6 V

Height  

4.83mm

Length  

10.29mm

Width  

9.65mm

REACH SVHC  

Unknown

Radiation Hardening  

No

RoHS Status  

RoHS Compliant

Lead Free  

Lead Free