Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Weight  

1.8g

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

254W Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

23A Ta 80A Tc

Turn Off Delay Time  

57 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

Automotive, AEC-Q101, PowerTrench®

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Finish  

Tin (Sn)

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

254W

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3.1m Ω @ 80A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

12200pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

235nC @ 10V

Rise Time  

19.3ns

Vgs (Max)  

±20V

Fall Time (Typ)  

17.2 ns

Continuous Drain Current (ID)  

80A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

23A

Drain-source On Resistance-Max  

0.0031Ohm

Drain to Source Breakdown Voltage  

40V

Avalanche Energy Rating (Eas)  

720 mJ

RoHS Status  

ROHS3 Compliant