Mounting Type  

Through Hole

Package / Case  

TO-251-3 Short Leads, IPak, TO-251AA

Surface Mount  

NO

Number of Pins  

4

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

14.5A Ta 124A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 11.5V

Number of Elements  

1

Power Dissipation (Max)  

1.43W Ta 107W Tc

Turn Off Delay Time  

35 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.5V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Published  

2008

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

LAST SHIPMENTS (Last Updated: 1 week ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSIP-T3

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

2.5W

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4m Ω @ 30A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4490pF @ 12V

Gate Charge (Qg) (Max) @ Vgs  

40nC @ 4.5V

Rise Time  

19ns

Vgs (Max)  

±20V

Fall Time (Typ)  

5 ns

Continuous Drain Current (ID)  

117A

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.0055Ohm

Drain to Source Breakdown Voltage  

30V

Pulsed Drain Current-Max (IDM)  

230A

RoHS Status  

RoHS Compliant

Lead Free  

Lead Free