Mounting Type  

Through Hole

Package / Case  

TO-262-3 Long Leads, I2Pak, TO-262AA

Surface Mount  

NO

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

100A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

3.8W Ta 200W Tc

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2001

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Additional Feature  

ULTRA LOW RESISTANCE

HTS Code  

8541.29.00.95

Terminal Position  

SINGLE

JESD-30 Code  

R-PSIP-T3

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

7.8m Ω @ 78A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

5600pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

250nC @ 10V

Drain to Source Voltage (Vdss)  

75V

Vgs (Max)  

±20V

Drain Current-Max (Abs) (ID)  

75A

Drain-source On Resistance-Max  

0.0078Ohm

Pulsed Drain Current-Max (IDM)  

520A

DS Breakdown Voltage-Min  

75V

Avalanche Energy Rating (Eas)  

390 mJ

RoHS Status  

Non-RoHS Compliant