Mounting Type  

Surface Mount

Package / Case  

4-UFBGA, DSBGA

Contact Plating  

Copper, Silver, Tin

Mount  

Surface Mount

Number of Pins  

4

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

1W Ta

Current - Continuous Drain (Id) @ 25℃  

2.2A Tc

Drive Voltage (Max Rds On, Min Rds On)  

1.5V 4.5V

Turn Off Delay Time  

68 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

1V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tape & Reel (TR)

Series  

NexFET™

JESD-609 Code  

e1

Pbfree Code  

no

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

4

Termination  

SMD/SMT

ECCN Code  

EAR99

Terminal Finish  

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Position  

BOTTOM

Terminal Form  

BALL

Peak Reflow Temperature (Cel)  

260

Base Part Number  

CSD23201

Configuration  

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

1W

Turn On Delay Time  

24 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

82m Ω @ 500mA, 4.5V

Input Capacitance (Ciss) (Max) @ Vds  

325pF @ 6V

Gate Charge (Qg) (Max) @ Vgs  

2.4nC @ 4.5V

Rise Time  

19ns

Fall Time (Typ)  

29 ns

Continuous Drain Current (ID)  

2.2A

Threshold Voltage  

600mV

Gate to Source Voltage (Vgs)  

-6V

Drain to Source Breakdown Voltage  

12V

Dual Supply Voltage  

12V

Nominal Vgs  

600 mV

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Contains Lead