Mounting Type  

Surface Mount

Package / Case  

TO-236-3, SC-59, SOT-23-3

Surface Mount  

YES

Transistor Element Material  

SILICON

Number of Elements  

1

Operating Temperature (Max.)  

150°C

Current - Continuous Drain (Id) @ 25℃  

4.2A Ta

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

1.2V @ 250μA

Packaging  

Cut Tape (CT)

Series  

HEXFET®

Published  

2003

JESD-609 Code  

e3

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

HIGH RELIABILITY

Terminal Position  

DUAL

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PDSO-G3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

45m Ω @ 4.2A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds  

740pF @ 15V

Gate Charge (Qg) (Max) @ Vgs  

12nC @ 5V

Drain to Source Voltage (Vdss)  

20V

JEDEC-95 Code  

TO-236AB

Drain Current-Max (Abs) (ID)  

4.2A

Drain-source On Resistance-Max  

0.045Ohm

Pulsed Drain Current-Max (IDM)  

33A

DS Breakdown Voltage-Min  

20V

Power Dissipation-Max (Abs)  

1.25W

RoHS Status  

Non-RoHS Compliant