Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount  

YES

Transistor Element Material  

SILICON

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

80A Tc

Number of Elements  

1

Power Dissipation (Max)  

260W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2003

JESD-609 Code  

e3

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Position  

SINGLE

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

15m Ω @ 45A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3830pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

120nC @ 10V

Drain to Source Voltage (Vdss)  

100V

Vgs (Max)  

±20V

Drain Current-Max (Abs) (ID)  

75A

Drain-source On Resistance-Max  

0.015Ohm

Pulsed Drain Current-Max (IDM)  

320A

DS Breakdown Voltage-Min  

100V

Avalanche Energy Rating (Eas)  

310 mJ

RoHS Status  

ROHS3 Compliant