Mounting Type  

Through Hole

Package / Case  

TO-220-3

Surface Mount  

NO

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

75A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

140W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2003

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSFM-T3

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

5.5m Ω @ 75A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3000pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

100nC @ 10V

Drain to Source Voltage (Vdss)  

40V

Vgs (Max)  

±20V

JEDEC-95 Code  

TO-220AB

Drain Current-Max (Abs) (ID)  

75A

Drain-source On Resistance-Max  

0.0055Ohm

Pulsed Drain Current-Max (IDM)  

470A

DS Breakdown Voltage-Min  

40V

Avalanche Energy Rating (Eas)  

220 mJ

RoHS Status  

Non-RoHS Compliant