Mounting Type  

Surface Mount

Package / Case  

8-SOIC (0.154, 3.90mm Width)

Surface Mount  

YES

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

19A Ta

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Number of Elements  

1

Power Dissipation (Max)  

2.5W Ta

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2004

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

8

Terminal Finish  

NOT SPECIFIED

Terminal Position  

DUAL

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PDSO-G8

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4.5m Ω @ 19A, 10V

Vgs(th) (Max) @ Id  

2.25V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

3710pF @ 15V

Gate Charge (Qg) (Max) @ Vgs  

44nC @ 4.5V

Drain to Source Voltage (Vdss)  

30V

Vgs (Max)  

±20V

JEDEC-95 Code  

MS-012AA

Drain Current-Max (Abs) (ID)  

19A

Drain-source On Resistance-Max  

0.0045Ohm

Pulsed Drain Current-Max (IDM)  

160A

DS Breakdown Voltage-Min  

30V

Avalanche Energy Rating (Eas)  

25 mJ

RoHS Status  

Non-RoHS Compliant