Package / Case  

ISOTOP

Mount  

Chassis Mount, Screw

Mounting Type  

Chassis Mount

Number of Pins  

4

Transistor Element Material  

SILICON

Turn Off Delay Time  

430 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Power Dissipation (Max)  

360W Tc

Current - Continuous Drain (Id) @ 25℃  

180A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Series  

STripFET™

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

4

ECCN Code  

EAR99

Terminal Finish  

Nickel (Ni)

Additional Feature  

AVALANCHE RATED

Voltage - Rated DC  

100V

Terminal Position  

UPPER

Terminal Form  

UNSPECIFIED

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

180A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STE1

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

360W

Case Connection  

ISOLATED

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

6 Ω @ 40A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

21000pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

795nC @ 10V

Rise Time  

600ns

Vgs (Max)  

±20V

Fall Time (Typ)  

440 ns

Continuous Drain Current (ID)  

180A

Threshold Voltage  

3V

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

6Ohm

Drain to Source Breakdown Voltage  

100V

Pulsed Drain Current-Max (IDM)  

360A

Avalanche Energy Rating (Eas)  

720 mJ

Isolation Voltage  

2.5kV

Nominal Vgs  

3 V

REACH SVHC  

not_compliant

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free