Factory Lead Time  

8 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

2A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

70W Tc

Turn Off Delay Time  

53 ns

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

PolarHV™

Published  

2006

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

AVALANCHE RATED

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

70W

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

6 Ω @ 1A, 10V

Vgs(th) (Max) @ Id  

5.5V @ 50μA

Input Capacitance (Ciss) (Max) @ Vds  

440pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

10.6nC @ 10V

Rise Time  

35ns

Vgs (Max)  

±30V

Fall Time (Typ)  

28 ns

Continuous Drain Current (ID)  

2A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

2A

Drain-source On Resistance-Max  

6Ohm

Drain to Source Breakdown Voltage  

800V

Pulsed Drain Current-Max (IDM)  

4A

Avalanche Energy Rating (Eas)  

100 mJ

RoHS Status  

RoHS Compliant