Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-3P-3, SC-65-3

Number of Pins  

3

Transistor Element Material  

SILICON

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

12.6A Tc

Number of Elements  

1

Power Dissipation (Max)  

300W Tc

Turn Off Delay Time  

155 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

QFET®

Published  

2007

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Voltage - Rated DC  

800V

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

12.6A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

750m Ω @ 6.3A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3500pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

88nC @ 10V

Rise Time  

150ns

Vgs (Max)  

±30V

Fall Time (Typ)  

110 ns

Continuous Drain Current (ID)  

12.6A

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.75Ohm

Drain to Source Breakdown Voltage  

800V

Pulsed Drain Current-Max (IDM)  

50.4A

Avalanche Energy Rating (Eas)  

1100 mJ

RoHS Status  

RoHS Compliant

Lead Free  

Lead Free