Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

9.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

56W Tc

Turn Off Delay Time  

90 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

QFET®

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

HTS Code  

8541.29.00.95

Voltage - Rated DC  

400V

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

16A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

56W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

270m Ω @ 4.75A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2300pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

60nC @ 10V

Rise Time  

185ns

Vgs (Max)  

±30V

Fall Time (Typ)  

105 ns

Continuous Drain Current (ID)  

9.5A

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.27Ohm

Drain to Source Breakdown Voltage  

400V

Avalanche Energy Rating (Eas)  

1000 mJ

RoHS Status  

RoHS Compliant

Lead Free  

Lead Free