Surface Mount  

NO

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

10.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

180W Tc

Series  

QFET®

Published  

2000

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

HTS Code  

8541.29.00.95

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

700m Ω @ 5.3A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1900pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

54nC @ 10V

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±30V

JEDEC-95 Code  

TO-220AB

Drain Current-Max (Abs) (ID)  

12A

Drain-source On Resistance-Max  

0.65Ohm

Pulsed Drain Current-Max (IDM)  

48A

DS Breakdown Voltage-Min  

600V

Avalanche Energy Rating (Eas)  

870 mJ

REACH SVHC  

compliant