Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Weight  

1.8g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

9A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

135W Tc

Turn Off Delay Time  

93 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

QFET®

Published  

2003

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE, NOT REC (Last Updated: 4 days ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Termination  

Through Hole

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

500V

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

9A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

135W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

800m Ω @ 4.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1030pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

35nC @ 10V

Rise Time  

65ns

Vgs (Max)  

±30V

Fall Time (Typ)  

64 ns

Continuous Drain Current (ID)  

9A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

9A

Drain-source On Resistance-Max  

0.8Ohm

Drain to Source Breakdown Voltage  

500V

Dual Supply Voltage  

500V

Nominal Vgs  

4 V

REACH SVHC  

No SVHC

RoHS Status  

RoHS Compliant

Lead Free  

Lead Free