Package / Case  

TO-220-3 Full Pack

Mount  

Through Hole

Mounting Type  

Through Hole

Transistor Element Material  

SILICON

Power Dissipation (Max)  

28W Tc

Turn Off Delay Time  

20 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

1.6A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

QFET®

Published  

2000

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

HTS Code  

8541.29.00.95

Voltage - Rated DC  

600V

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

1.6A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

28W

Case Connection  

ISOLATED

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4.7 Ω @ 800mA, 10V

Input Capacitance (Ciss) (Max) @ Vds  

350pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

11nC @ 10V

Rise Time  

25ns

Vgs (Max)  

±30V

Fall Time (Typ)  

25 ns

Continuous Drain Current (ID)  

1.6A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

2A

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

8A

Avalanche Energy Rating (Eas)  

120 mJ

RoHS Status  

RoHS Compliant

Lead Free  

Lead Free