Package / Case  

TO-220-3

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

14 ns

Power Dissipation (Max)  

48.4W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

15A Tc

Published  

2005

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Termination  

Through Hole

Terminal Finish  

Tin (Sn)

HTS Code  

8541.29.00.95

Voltage - Rated DC  

60V

Peak Reflow Temperature (Cel)  

260

Current Rating  

15A

Time@Peak Reflow Temperature-Max (s)  

40

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

48.4W

Case Connection  

DRAIN

Turn On Delay Time  

10 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

90m Ω @ 7.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

450pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

22nC @ 10V

Rise Time  

25ns

Vgs (Max)  

±20V

Fall Time (Typ)  

13 ns

Continuous Drain Current (ID)  

15A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.09Ohm

Drain to Source Breakdown Voltage  

60V

Pulsed Drain Current-Max (IDM)  

45A

Dual Supply Voltage  

60V

Avalanche Energy Rating (Eas)  

61 mJ

Nominal Vgs  

2.9 V

RoHS Status  

RoHS Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free