Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

7.6A Ta 58A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Number of Elements  

1

Power Dissipation (Max)  

1.04W Ta 62.5W Tc

Turn Off Delay Time  

14 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Published  

2012

JESD-609 Code  

e0

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin/Lead (Sn/Pb)

HTS Code  

8541.29.00.95

Voltage - Rated DC  

24V

Peak Reflow Temperature (Cel)  

240

Current Rating  

65A

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

62.5W

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

10.5m Ω @ 20A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1330pF @ 20V

Gate Charge (Qg) (Max) @ Vgs  

9.5nC @ 4.5V

Rise Time  

53ns

Drain to Source Voltage (Vdss)  

25V

Vgs (Max)  

±20V

Fall Time (Typ)  

10 ns

Continuous Drain Current (ID)  

58A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

7.6A

Drain-source On Resistance-Max  

0.0105Ohm

Drain to Source Breakdown Voltage  

24V

Pulsed Drain Current-Max (IDM)  

160A

Avalanche Energy Rating (Eas)  

60 mJ

REACH SVHC  

not_compliant

RoHS Status  

Non-RoHS Compliant

Lead Free  

Contains Lead