Package / Case  

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.5V @ 1mA

Power Dissipation (Max)  

350mW Tc

Operating Temperature (Max.)  

150°C

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

5V 10V

Current - Continuous Drain (Id) @ 25℃  

200mA Ta

Published  

2004

Packaging  

Tape & Box (TB)

JESD-609 Code  

e0

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin/Lead (Sn/Pb)

Voltage - Rated DC  

60V

Terminal Position  

BOTTOM

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

200mA

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

O-PBCY-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.2 Ω @ 1A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

100pF @ 15V

Vgs (Max)  

±20V

Continuous Drain Current (ID)  

200mA

Drain Current-Max (Abs) (ID)  

0.2A

DS Breakdown Voltage-Min  

30V

Feedback Cap-Max (Crss)  

25 pF

RoHS Status  

Non-RoHS Compliant

REACH SVHC  

not_compliant

Lead Free  

Contains Lead