Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

3.6A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

100W Tc

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SIPMOS®

JESD-609 Code  

e0

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Finish  

Tin/Lead (Sn/Pb)

Additional Feature  

AVALANCHE RATED

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE

Operating Mode  

ENHANCEMENT MODE

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3 Ω @ 2A, 10V

Vgs(th) (Max) @ Id  

4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds  

1350pF @ 25V

Drain to Source Voltage (Vdss)  

800V

Vgs (Max)  

±20V

Continuous Drain Current (ID)  

3.6A

JEDEC-95 Code  

TO-220AB

Drain Current-Max (Abs) (ID)  

3A

Drain-source On Resistance-Max  

3Ohm

Pulsed Drain Current-Max (IDM)  

12A

DS Breakdown Voltage-Min  

800V

Avalanche Energy Rating (Eas)  

320 mJ

RoHS Status  

Non-RoHS Compliant