Factory Lead Time  

4 Weeks

Package / Case  

TO-3P-3, SC-65-3

Mounting Type  

Through Hole

Mount  

Through Hole

Weight  

6.401g

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Power Dissipation (Max)  

218W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

13.5A Tc

Series  

QFET®

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

480m Ω @ 6.75A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2055pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

56nC @ 10V

Drain to Source Voltage (Vdss)  

500V

Vgs (Max)  

±30V

Continuous Drain Current (ID)  

13.5A

Drain-source On Resistance-Max  

0.48Ohm

Pulsed Drain Current-Max (IDM)  

54A

DS Breakdown Voltage-Min  

500V

Avalanche Energy Rating (Eas)  

860 mJ

RoHS Status  

ROHS3 Compliant