Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Current - Continuous Drain (Id) @ 25℃  

2A Tc

Power Dissipation (Max)  

100W Tc

Turn Off Delay Time  

60 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Published  

2009

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Resistance  

7.5MOhm

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

AVALANCHE RATED

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

100W

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

7 Ω @ 1A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

825pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

40nC @ 10V

Rise Time  

15ns

Drain to Source Voltage (Vdss)  

1000V

Vgs (Max)  

±20V

Fall Time (Typ)  

30 ns

Continuous Drain Current (ID)  

2A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

2A

Drain to Source Breakdown Voltage  

1kV

Pulsed Drain Current-Max (IDM)  

8A

Avalanche Energy Rating (Eas)  

150 mJ

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free