Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-3P-3 Full Pack

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

15A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

110W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.15V @ 1mA

Operating Temperature  

150°C TJ

Packaging  

Tube

Published  

2011

Part Status  

Last Time Buy

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

ISOLATED

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

300m Ω @ 7.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1700pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

50nC @ 10V

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±30V

Continuous Drain Current (ID)  

15A

Pulsed Drain Current-Max (IDM)  

60A

DS Breakdown Voltage-Min  

600V

Avalanche Energy Rating (Eas)  

15 mJ

REACH SVHC  

not_compliant

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free