Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

4

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

13A Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

55 ns

Power Dissipation (Max)  

110W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Series  

MDmesh™ II

Packaging  

Tape & Reel (TR)

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

285mOhm

Terminal Finish  

Matte Tin (Sn) - annealed

Terminal Position  

SINGLE

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

245

Base Part Number  

STB18N

JESD-30 Code  

R-PSSO-G2

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

80W

Turn On Delay Time  

12 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

285m Ω @ 6.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1000pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

35nC @ 10V

Rise Time  

15ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±25V

Fall Time (Typ)  

25 ns

Continuous Drain Current (ID)  

13A

Threshold Voltage  

3V

Gate to Source Voltage (Vgs)  

25V

Pulsed Drain Current-Max (IDM)  

52A

DS Breakdown Voltage-Min  

600V

Nominal Vgs  

3 V

Width  

10.4mm

Length  

10.75mm

Height  

4.6mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free