Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

330W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

120A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

STripFET™

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

ULTRA-LOW RESISTANCE

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STI200N

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3.8m Ω @ 60A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

6265pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

101nC @ 10V

Drain to Source Voltage (Vdss)  

60V

Vgs (Max)  

±20V

Continuous Drain Current (ID)  

120A

Pulsed Drain Current-Max (IDM)  

480A

DS Breakdown Voltage-Min  

60V

Avalanche Energy Rating (Eas)  

918 mJ

REACH SVHC  

not_compliant

RoHS Status  

ROHS3 Compliant