Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

120A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

330W Tc

Turn Off Delay Time  

86 ns

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

STripFET™

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

ULTRA-LOW RESISTANCE

Base Part Number  

STP200

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

330W

Turn On Delay Time  

26 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3.9m Ω @ 60A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

6800pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

100nC @ 10V

Rise Time  

75ns

Vgs (Max)  

±20V

Fall Time (Typ)  

14 ns

Continuous Drain Current (ID)  

120A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.0038Ohm

Drain to Source Breakdown Voltage  

60V

Pulsed Drain Current-Max (IDM)  

480A

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free