Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

110W Tc

Current - Continuous Drain (Id) @ 25℃  

13A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Series  

MDmesh™ II

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Finish  

Matte Tin (Sn) - annealed

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STI18N

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

285m Ω @ 6.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1000pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

35nC @ 10V

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±25V

Continuous Drain Current (ID)  

13A

Drain-source On Resistance-Max  

0.285Ohm

Pulsed Drain Current-Max (IDM)  

52A

DS Breakdown Voltage-Min  

600V

REACH SVHC  

not_compliant

RoHS Status  

ROHS3 Compliant