Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

70W Tc

Turn Off Delay Time  

37 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

7A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Series  

FDmesh™ II

Operating Temperature  

150°C TJ

Packaging  

Tube

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Finish  

Matte Tin (Sn)

Base Part Number  

STP8N

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

70W

Turn On Delay Time  

9 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

700m Ω @ 3.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

560pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

22nC @ 10V

Rise Time  

22ns

Vgs (Max)  

±30V

Fall Time (Typ)  

22 ns

Continuous Drain Current (ID)  

7A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

7A

Drain-source On Resistance-Max  

0.7Ohm

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

28A

Avalanche Energy Rating (Eas)  

200 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant