Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

4.7A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

160W Tc

Turn Off Delay Time  

42 ns

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH™

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

3.5Ohm

Base Part Number  

STP5N

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

160W

Turn On Delay Time  

18 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3.5 Ω @ 2.3A, 10V

Vgs(th) (Max) @ Id  

5V @ 100μA

Input Capacitance (Ciss) (Max) @ Vds  

120pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

55nC @ 10V

Rise Time  

9ns

Drain to Source Voltage (Vdss)  

1200V

Vgs (Max)  

±30V

Fall Time (Typ)  

30 ns

Continuous Drain Current (ID)  

4.7A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

4.4A

Drain to Source Breakdown Voltage  

1.2kV

Avalanche Energy Rating (Eas)  

400 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free