Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Transistor Element Material  

SILICON

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

120A Tc

Number of Elements  

1

Power Dissipation (Max)  

300W Tc

Turn Off Delay Time  

140 ns

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

STripFET™ II

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

Base Part Number  

STW150

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

Case Connection  

DRAIN

Turn On Delay Time  

35 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

6m Ω @ 60A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

4400pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

190nC @ 10V

Rise Time  

180ns

Vgs (Max)  

±20V

Fall Time (Typ)  

80 ns

Continuous Drain Current (ID)  

120A

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.006Ohm

Drain to Source Breakdown Voltage  

55V

Pulsed Drain Current-Max (IDM)  

480A

Avalanche Energy Rating (Eas)  

850 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant