Package / Case  

TO-262-3 Long Leads, I2Pak, TO-262AA

Mounting Type  

Through Hole

Mount  

Through Hole

Transistor Element Material  

SILICON

Turn Off Delay Time  

125 ns

Power Dissipation (Max)  

300W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

80A Tc

Series  

STripFET™ II

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

-6.5mOhm

Terminal Finish  

Tin (Sn)

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

not_compliant

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STB141N

Pin Count  

3

JESD-30 Code  

R-PSIP-T3

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

8m Ω @ 40A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

5300pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

142nC @ 10V

Rise Time  

150ns

Vgs (Max)  

±20V

Fall Time (Typ)  

45 ns

Continuous Drain Current (ID)  

80A

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

55V

Pulsed Drain Current-Max (IDM)  

320A

Avalanche Energy Rating (Eas)  

1300 mJ

RoHS Status  

ROHS3 Compliant