Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-251-3 Short Leads, IPak, TO-251AA

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

1.6A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

45W Tc

Turn Off Delay Time  

20 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 50μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH™

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - annealed

Additional Feature  

AVALANCHE RATED

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STD2N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

45W

Turn On Delay Time  

7 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

7 Ω @ 800mA, 10V

Input Capacitance (Ciss) (Max) @ Vds  

280pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

11.4nC @ 10V

Rise Time  

17ns

Vgs (Max)  

±30V

Fall Time (Typ)  

35 ns

Continuous Drain Current (ID)  

1.6A

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

7Ohm

Drain to Source Breakdown Voltage  

700V

Pulsed Drain Current-Max (IDM)  

6.4A

Avalanche Energy Rating (Eas)  

110 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant