Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

25A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

190W Tc

Turn Off Delay Time  

110 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

FDmesh™ II

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

130mOhm

Base Part Number  

STW30N

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Voltage  

600V

Element Configuration  

Single

Current  

34A

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

190W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

130m Ω @ 12.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2800pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

100nC @ 10V

Rise Time  

50ns

Vgs (Max)  

±25V

Fall Time (Typ)  

75 ns

Continuous Drain Current (ID)  

25A

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

600V

Avalanche Energy Rating (Eas)  

900 mJ

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free