Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-251-3 Short Leads, IPak, TO-251AA

Number of Pins  

3

Transistor Element Material  

SILICON

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

3A Tc

Power Dissipation (Max)  

45W Tc

Turn Off Delay Time  

21 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 50μA

Number of Elements  

1

Series  

SuperMESH™

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STD4N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

45W

Turn On Delay Time  

10 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2.7 Ω @ 1.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

310pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

12nC @ 10V

Rise Time  

7ns

Vgs (Max)  

±30V

Fall Time (Typ)  

11 ns

Continuous Drain Current (ID)  

1.5A

Threshold Voltage  

3.75V

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

3A

Drain to Source Breakdown Voltage  

500V

Width  

2.4mm

Height  

6.2mm

Length  

6.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant